bcw66g vishay semiconductors formerly general semiconductor document number 88172 www.vishay.com 09-may-02 1 small signal transistor (npn) features ?npn silicon epitaxial planar transistors ?suited for low level, low noise, low frequency applications in hybrid cicuits. ?low current, low voltage. ?as complementary type, bcw68g pnp transistor is recommended. mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: eg packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-emitter voltage v ceo 45 v collector-base voltage v cbo 75 v emitter-base voltage v ebo 5.0 v collector current (dc) i c 800 ma peak collector current i cm 1.0 a base current (dc) i b 100 ma peak base current i bm 200 ma power dissipation, t s = 79 cp tot 330 mw maximum junction temperature t j 150 c storage temperature range t stg 65 to +150 c thermal resistance, junction to ambient air r ja 285 (1) c/w thermal resistance, junction to soldering point r js 215 c/w note: (1) mounted on fr-4 printed-ciruit board. 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout pin configuration 1. base 2. emitter 3. collector
bcw66g vishay semiconductors formerly general semiconductor www.vishay.com document number 88172 2 09-may-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol min. typ. max. unit dc current gain (1) at v ce = 10v, i c = 100 ah fe 50 at v ce = 1v, i c = 10ma h fe 110 at v ce = 1v, i c = 100ma h fe 160 250 400 at v ce = 2v, i c = 500ma h fe 60 collector-emitter saturation voltage (1) at i c = 100ma, i b = 10ma v cesat 0.3 v at i c = 500ma, i b = 50ma v cesat 0.7 v base-emitter saturation voltage (1) at i c = 100ma, i b = 10ma v besat 1.25 v at i c = 500ma, i b = 50ma v besat 2v collector-emitter breakdown voltage at i c = 10ma, i b = 0 v( br)ceo 45 v collector-base breakdown voltage at i c = 10 a, i b = 0 v( br)cbo 75 v emitter-base breakdown voltage at i e = 10 a, i c = 0 v( br)ebo 5 v collector-base cut-off current at v cb = 45v, i e = 0 i cbo 20 na at v cb = 45v, i e = 0, t a = 150 ci cbo 20 a emitter-base cut-off current at v eb = 4v, i c = 0 i ebo 20 na gain-bandwidth product at v ce = 5v, i c = 50ma, f = 20mhz f t 170 mh z collector-base capacitance at v cb = 10v, f = 1mhz c cb 6 pf emitter-base capacitance at v eb = 0.5v, f = 1mhz c eb 60 pf note: (1) pulse test: t 300 s, d = 2%
bcw66g vishay semiconductors formerly general semiconductor document number 88172 www.vishay.com 09-may-02 3 90% 10% 90% 90% 10% 10% t off t s t f t r t d t on input output fig. 1 - switching waveforms
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